Referenced Items are not available for this document.
High-gain GaAs/AlGaAs n-p-n heterojunction bipolar transistors (HBT's) on Si substrates grown by molecular beam epitaxy (MBE) have been fabricated and tested. In this structure, an n/sup +/-InAs emitter cap layer was grown in order to achieve a nonalloyed ohmic contact. Typical devices with an emitter dimension of 50*50 mu m/sup 2/ exhibited a current gain as high as 45 at a collector current density of 2*10/sup 3/ A/cm/sup 2/ with an ideality factor of 1.4. This is the highest current gain reported for HBT's grown on Si substrates. Breakdown voltages as high as 10 and 15 V were observed for the emitter-base and collector-base junctions respectively. The investigation on devices with varying emitter dimensions demonstrates that much higher current gains can be expected.<
Published in:
Electron Device Letters, IEEE
(Volume:9
,
Issue:
8
)
Date of Publication: Aug. 1988
- Page(s):
- 405 - 407
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 3252595
- Digital Object Identifier :
- 10.1109/55.759
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug. 1988
- Sponsored by :
- IEEE Electron Devices Society
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