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Activity models for use in low power, high-level synthesis

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2 Author(s)
R. Henning ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA ; C. Chakrabarti

Characteristics of the data being processed can be used to reduce the power consumption in the data path of a VLSI circuit by exploiting their relationship with transition activity during high-level synthesis. Important relationships between fixed-point, two's complement data characteristics and 0→1 transition activity in static CMOS circuits are presented in this paper. Models for computing transition activity in terms of a new set of transition parameters are developed. Propagation of data characteristics through multiplication and addition functional units is discussed. The use of the relationships and models to analyze and significantly reduce 0→1 transition activity with little computational effort is illustrated with examples

Published in:

Acoustics, Speech, and Signal Processing, 1999. Proceedings., 1999 IEEE International Conference on  (Volume:4 )

Date of Conference:

15-19 Mar 1999