By Topic

Design and analysis of a novel quantum-MOS sense amplifier circuit

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Uemura, Tetsuya ; Fundamental Res. Labs., NEC Corp., Ibaraki, Japan ; Mazumder, P.

A novel quantum-MOS sense amplifier circuit consisting of resonant tunneling diodes (RTDs) as pull-up devices and NMOS transistors is discussed in this paper. Compared to the conventional sense amplifier circuits using CMOS technology, the proposed QMOS sense amplifier exhibits about 20% higher sensing speed. The cross-coupled QMOS latch, which is at the heart of the sense amplifier circuit, has metastable and unstable states which are closely related to the I-V characteristics of the RTDs. The stability analysis has been made by using phase-plot diagram and determining how RTD parameters relate to circuit speed. Robustness of the sense amplifier has been discussed

Published in:

VLSI, 1999. Proceedings. Ninth Great Lakes Symposium on

Date of Conference:

4-6 Mar 1999