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Amorphous-silicon thin-film transistors with very high field-effect mobility

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3 Author(s)
Lin, Jyh‐Ling ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Sah, Wen‐Jyh ; Lee, Si-Chen

The fabrication and performance of hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with field-effect mobilities of 5.1 cm/sup 2//V-s are discussed. This is the highest field-effect mobility of this type of TFT reported to date. The device shows an on/off current ratio exceeding 10/sup 5/ and a subthreshold swing of 0.5 V/decade.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 3 )