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A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process

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2 Author(s)
A. Thomsen ; Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; M. A. Brooke

A floating-gate MOSFET which is programmable in both directions by Fowler-Nordheim tunneling and is fabricated using an inexpensive standard 2- mu m double-polysilicon CMOS technology is discussed. Tunneling occurs at a crossover of polysilicon 1 with polysilicon 2. Device layout and basic device characteristics are presented, and recommendations for efficient programming are given. This is the first floating-gate FET with a tunneling injector fabricated in standard technology that has close to symmetric programming characteristics for both charging and discharging of the gate.<>

Published in:

IEEE Electron Device Letters  (Volume:12 ,  Issue: 3 )