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Leakage mechanisms in the heavily doped gated diode structures

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2 Author(s)
Chul Hi Han ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Kwan Kim

A leakage current model is presented which shows very good agreement with reported experimental results on gated diode structures with contemporary ULSI dimensions. The leakage current is modeled as the Shockley-Read-Hall generation current, enhanced by the Poole-Frenkel effect and trap-assisted tunneling. The model shows very good agreement on gate voltage, temperature, and oxide thickness dependence for the normal operating voltage range. It is found from the model that the doping range from 2*10/sup 18/ to 1*10/sup 19/ cm/sup -3/ gives the most significant degradation to the leakage characteristics in trench-type DRAM cells and the drain of MOSFETs.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 2 )