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Novel hydrogen annealing for forming SiO/sub 2/ film by rapid thermal processing

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3 Author(s)
Arakawa, T. ; OKI Electr. Inc. Co. Ltd., Tokyo, Japan ; Fukuda, H. ; Ohno, S.

Hydrogen annealing at 700-1100 degrees C for 0-300 s has been combined with SiO/sub 2/ formation by rapid thermal processing (RTP). The SiO/sub 2/ films formed with the above processes were evaluated by C-V and I-V measurements and by time-dependent dielectric breakdown (TDDB) tests. These films provide longer time to breakdown andless positive charge generation than SiO/sub 2/ films formed without H/sub 2/ annealing. In particular, the SiO/sub 2/ formation-H/sub 2/ annealing SiO/sub 2/ formation process is quite effective in improving the dielectric strength of the thin RTP-SiO/sub 2/ film.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 2 )