Novel hydrogen annealing for forming SiO/sub 2/ film by rapid thermal processing

Hydrogen annealing at 700-1100 degrees C for 0-300 s has been combined with SiO/sub 2/ formation by rapid thermal processing (RTP). The SiO/sub 2/ films formed with the above processes were evaluated by C-V and I-V measurements and by time-dependent dielectric breakdown (TDDB) tests. These films provide longer time to breakdown andless positive charge generation than SiO/sub 2/ films formed without H/sub 2/ annealing. In particular, the SiO/sub 2/ formation-H/sub 2/ annealing SiO/sub 2/ formation process is quite effective in improving the dielectric strength of the thin RTP-SiO/sub 2/ film.<
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