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Evidence of acceptor-like oxide defects created by hot-carrier injection in n-MOSFET's: a charge-pumping study

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3 Author(s)
Vuillaume, D. ; Inst. Superieur d''Electron. du Nord, Lille, France ; Marchetaux, J.C. ; Boudou, A.

Charge-pumping measurements and simulation of charge-pumping characteristics demonstrate that acceptor-like oxide traps (i.e. negatively charged when occupied by an electron and neutral when occupied by a hole) are created in the gate-drain overlap region of an n-MOSFET subjected to hot-electron and/or hot-hole injections (HEI and/or HHI). These traps are located in the gate-drain overlap region, and it is emphasized that the charge-pumping technique is able to detect them in addition to the damages in the channel.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 2 )