Referenced Items are not available for this document.
Charge-pumping measurements and simulation of charge-pumping characteristics demonstrate that acceptor-like oxide traps (i.e. negatively charged when occupied by an electron and neutral when occupied by a hole) are created in the gate-drain overlap region of an n-MOSFET subjected to hot-electron and/or hot-hole injections (HEI and/or HHI). These traps are located in the gate-drain overlap region, and it is emphasized that the charge-pumping technique is able to detect them in addition to the damages in the channel.<
Published in:
Electron Device Letters, IEEE
(Volume:12
,
Issue:
2
)
Date of Publication: Feb. 1991
- Page(s):
- 60 - 62
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 3868857
- Digital Object Identifier :
- 10.1109/55.75703
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb. 1991
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
