By Topic

In0.53Ga0.47As/In0.52Al0.48 As separate absorption, charge, and multiplication layer long wavelength avalanche photodiode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Dries, J.C. ; Dept. of Electr. Eng., Princeton Univ., NJ, USA ; Thomson, K.J. ; Forrest, S.R.

The authors demonstrate the use of In0.52Al0.48 As as the gain material in a separate absorption, charge, and multiplication layer avalanche photodiode (APD) with sensitivity to 0.9-1.7 μm wavelength light. A hole to electron ionisation rate ratio of k=0.23 is observed, representing a significant improvement over the 1/k=0.4 characteristic of InP/In0.53Ga0.47As avalanche photodiodes. Primary dark currents of ~10 nA and gains approaching 100 for 100 μm diameter mesa devices are observed. A 6 dB sensitivity advantage is measured for an APD receiver over an In0.53Ga0.47As p-i-n detector receiver at a wavelength of 1.55 μm, a bit rate of 1.5 Gbit/s, and 10-9 bit error rate

Published in:

Electronics Letters  (Volume:35 ,  Issue: 4 )