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Self-aligned GaAs JFETs for low-power microwave amplifiers and RFICs at 2.4 GHz

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7 Author(s)
A. G. Baca ; Sandia Nat. Labs., Albuquerque, NM, USA ; V. M. Hietala ; D. Greenway ; J. C. Zolper
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Self-aligned GaAs junction field effect transistor (JFET) narrowband amplifiers operating at 2.4 GHz have been designed and fabricated both with discrete JFETs as a hybrid amplifier and as radiofrequency integrated circuits (RFICs). Enhancement-mode JFETs were used in order to be compatible with complementary digital logic. Hybrid amplifiers achieved 8-10 dB of gain at 2.4 GHz and 1 mW DC bias level. The RFIC achieved 10 dB of gain at 2.4 GHz and 2 mW DC bias level

Published in:

Electronics Letters  (Volume:35 ,  Issue: 4 )