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Process capability of local oxidation of silicon isolation technology for sub-half micrometre custom IC applications

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1 Author(s)
Song, J. ; Dept. of Electron. Eng., Changwon Nat. Univ., Kyungnam, South Korea

The process capability of conventional LOCOS isolation for sub-half micrometre custom IC applications is investigated in terms of field oxide thinning and bird's beak encroachment. A 0.4 μm isolation space appears to be the practical limit when the appropriate film thickness combination is used

Published in:

Electronics Letters  (Volume:35 ,  Issue: 6 )