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Single-crystal ferroelectric microwave capacitor fabricated by separation by hydrogen implantation

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4 Author(s)
Kub, F.J. ; Naval Res. Lab., Washington, DC, USA ; Hobart, K.D. ; Pond, J.M. ; Kirchoefer, S.W.

Microwave ferroelectric capacitors have been fabricated using separation by hydrogen ion implantation and transfer of a 500 nm thick single crystal SrTiO3 layer to an insulating glass substrate. The capacitor films are of high quality with a measured quality factor of nearly 100 at 10 GHz

Published in:

Electronics Letters  (Volume:35 ,  Issue: 6 )