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A new bottom-gated poly-Si thin-film transistor

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4 Author(s)
Choi, Kwon-Young ; LCD R&D Group, Samsung Electron. Co., Kyungki, South Korea ; Park, Kee-Chan ; Park, Cheol-Min ; Min-Koo Han

We have proposed and fabricated the new bottom-gated poly-Si TFT with a partial amorphous-Si (a-Si) region by employing the selective laser annealing. The channel layer of the proposed TFTs is composed of poly-Si region in the center and a-Si region in the edge. The TEM image shows that the local a-Si region is successfully fabricated by the effective cut out of the incident laser light in the upper a-Si layer. Our experimental results show that the reverse leakage currents are decreased significantly in the new poly-Si TFT compared with conventional one. This reduction is due to the suppression of field emission currents by local a-Si region like that of a-Si TFTs while the ON currents are kept almost the same due to the considerable inducement of electron carriers in the short a-Si channel by the positive gate bias.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 4 )

Date of Publication:

April 1999

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