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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:46 Issue:4 Help

An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

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2 Author(s)
Hyungsoon Shin ; Dept. of Electron Eng., Ewha Women''s Univ., Seoul, South Korea ; Lee, Seungjun

A new 0.1-μm MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction

Published in:
Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 4 )

Date of Publication: Apr 1999

Page(s):
820 - 822
ISSN :
0018-9383
INSPEC Accession Number:
6217445
Digital Object Identifier :
10.1109/16.753725
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Apr 1999
Sponsored by :
IEEE Electron Devices Society

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