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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:46 Issue:4 Help

On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes

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6 Author(s)
Verzellesi, G. ; Dipt. di Ingegneria dei Mater., Trento Univ., Italy ; Dalla Betta, G.-F. ; Bosisio, L. ; Boscardin, M.
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We show that in high-resistivity silicon bulk generation lifetime and surface generation velocity can not be measured with acceptable accuracy using a single gated diode, unless the gate length is suitably tailored. The accuracy with which bulk generation lifetime can be evaluated is, in particular, limited by nonidealities, contributing extra components to the gated-diode current, which are not accounted for in the standard extraction procedure

Published in:
Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 4 )

Date of Publication: Apr 1999

Page(s):
817 - 820
ISSN :
0018-9383
INSPEC Accession Number:
6217444
Digital Object Identifier :
10.1109/16.753724
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Apr 1999
Sponsored by :
IEEE Electron Devices Society

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