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Low-frequency noise and interface states in GaAs homojunction far-infrared detectors

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2 Author(s)
Shen, W.Z. ; Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA, USA ; Perera, A.G.U.

Low-frequency noise characteristics of p-GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared (FIR) detectors are reported. The noise was found to exhibit 1/f behavior related to interface states at frequencies below 1 kHz and frequency independent shot noise at higher frequencies. The noise expressions correctly predict the dark current noise behavior, and provide a means of estimating both the gain and energy distribution of the interface states. The interface state density is estimated to be in the order of 1011 cm-2. It has been shown that the estimated gain and noise equivalent power are in good agreement with the previous results obtained via optical measurements

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Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 4 )