Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Assessment of beryllium out-diffusion in AlGaAs/GaAs heterojunction bipolar transistors using low-temperature photoluminescence technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Hong Wang ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore ; Geok Ing Ng ; Haiqun Zheng ; Zhang, Penghua

Low-temperature photoluminescence (PL) is used for the investigation of beryllium (Be) dopant out-diffusion in AlGaAs/GaAs abrupt single-heterojunction bipolar transistors (HBTs). The degree of Be out-diffusion into the emitter from a Be-doped base can be estimated based on the band gap narrowing effect (BGNE). The measured current gain and emitter-base turn-on voltage of HBTs fabricated on wafers with different growth conditions were found to correlate well with the PL results

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 4 )