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A new I-V model considering the impact-ionization effect initiated by the DIGBL current for the intrinsic n-channel poly-Si TFTs

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2 Author(s)
Hsin-Li Chen ; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Ching-Yuan Wu, Ph.D.

Considering the impact-ionization mechanism occurring in the high drain-bias (VDS) regime, a new I-V model considering the impact-ionization effect initiated by the drain-induced-grain-barrier-lowering (DIGBL) current has been established for the intrinsic n-channel poly-Si TFT. The simulation results considering the developed impact-ionization current model are in excellent agreement with the experimental output characteristics of the intrinsic n-channel poly-Si TFT with the mask-gate length ranging from 5 μm to 40 μm. In resolving the physical parameters and their underlying operation mechanisms including the grain-barrier height, DIGBL current, and impact-ionization current, the developed I-V model will be beneficial to further understand the underlying physics of the intrinsic poly-Si TFT

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Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 4 )