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An integrated CMOS micromechanical resonator high-Q oscillator

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2 Author(s)
C. T. -C. Nguyen ; Michigan Univ., Ann Arbor, MI, USA ; R. T. Howe

A completely monolithic high-Q oscillator, fabricated via a combined CMOS plus surface micromachining technology, is described, for which the oscillation frequency is controlled by a polysilicon micromechanical resonator with the intent of achieving high stability. The operation and performance of micromechanical resonators are modeled, with emphasis on circuit and noise modeling of multiport resonators. A series resonant oscillator design is discussed that utilizes a unique, gain-controllable transresistance sustaining amplifier. We show that in the absence of an automatic level control loop, the closed-loop, steady-state oscillation amplitude of this oscillator depends strongly upon the dc-bias voltage applied to the capacitively driven and sensed μresonator. Although the high-Q of the micromechanical resonator does contribute to improved oscillator stability, its limited power-handling ability outweighs the Q benefits and prevents this oscillator from achieving the high short-term stability normally expected of high-Q oscillators

Published in:

IEEE Journal of Solid-State Circuits  (Volume:34 ,  Issue: 4 )