Referenced Items are not available for this document.
In this paper an active integrated microstrip antenna at 24 GHz employing a three-terminal active device is presented. A high electron mobility transistor (HEMT) is integrated in a purely uniplanar microstrip structure by means of flip-chip technology, i.e., all terminals of the passive microstrip circuit are located on top of the substrate and no via-holes are needed. A radiated output power of 10 mW and a dc-to-RF efficiency of 20% are obtained. The deviations of the frequencies of operation from the predicted values are below ±0.5%
Published in:
Microwave and Guided Wave Letters, IEEE
(Volume:9
,
Issue:
1
)
Date of Publication: Jan 1999
- Page(s):
- 34 - 36
- ISSN :
- 1051-8207
- INSPEC Accession Number:
- 6207651
- Digital Object Identifier :
- 10.1109/75.752116
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan 1999
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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