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A novel high-Q and wide-frequency-range inductor using Si 3-D MMIC technology

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5 Author(s)
Kamogawa, K. ; NTT Wireless Syst. Lab., Kanagawa, Japan ; Nishikawa, K. ; Toyoda, I. ; Tokumitsu, T.
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A novel high-Q and wide-frequency-range inductor formed using three-dimensional (3-D) monolithic microwave integrated circuit (MMIC) technology on a conductive Si substrate is presented. A fabricated 1.24-nH spiral inductor achieves the very high resonant frequency of 29.3 GHz and maximum quality factor (Q) of 45.77 owing to thick dielectric layers and a ground plane that overlays the substrate. The measured results show that the Si 3-D MMIC is very suitable for realizing single-chip and mixed-mode transceivers for L-band to Ku-band applications

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:9 ,  Issue: 1 )

Date of Publication:

Jan 1999

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