Referenced Items are not available for this document.
A method which uses the front and the back gates of a fully depleted SOI transistor to extract the thickness of both the silicon film and the buried oxide is described. This is done by plotting the variation of the threshold voltage of the transistor driven by one gate versus the bias on the other gate and vice versa. Both the silicon film and the buried-oxide thicknesses can be derived independently. Any SOI transistor that can go into a fully depleted mode can be used
Published in:
Electron Devices, IEEE Transactions on
(Volume:38
,
Issue:
3
)
Date of Publication: Mar 1991
- Page(s):
- 674 - 676
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 3911489
- Digital Object Identifier :
- 10.1109/16.75181
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Mar 1991
- Sponsored by :
- IEEE Electron Devices Society
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