By Topic

New short-channel n-MOSFET current-voltage model in strong inversion and unified parameter extraction method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Byung-Jong Moon ; Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA ; Chan-Kwang Park ; Kwyro Lee ; Shur, M.

A semiempirical strong inversion current-voltage (I-V) model for submicrometer n-channel MOSFETs which is suitable for circuit simulation and rapid process characterization is proposed. The model is based on a more accurate velocity-field relationship in the linear region and finite drain conductance due to the channel length modulation effect in the saturation region. The parameter extraction starts from the experimental determination of the MOSFET saturation current and saturation voltage by differentiating the output characteristics in a unified and unambiguous way. These results are used in order to systematically extract the device and process parameters such as the effective electron saturation velocity and mobility, drain and source series resistances, effective gate length and characteristic length for channel length modulation, and short-channel effects. The values agree well with other independent measurements. The results of experimental studies of wide n-MOSFETs with nominal gate length of 0.8, 1.0, and 1.2 μm fabricated by an n-well CMOS process are reported. The calculated I-V characteristics using the extracted parameters show excellent agreement with the measurement results

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 3 )