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A divided/shared bit-line sensing scheme for ULSI DRAM cores

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3 Author(s)
Hidaka, H. ; Mitsubishi Electr. Corp., Hyogo, Japan ; Matsuda, Y. ; Fujishama, K.

A new dynamic RAM (DRAM) signal sensing principle, a divided/shared bit-line (DSB) sensing scheme, is proposed. This sensing scheme provides folded bit-line sensing operation in a crosspoint-type memory cell array. The DSB scheme offers a high-density DRAM memory core with the common-mode array noise eliminated. A bit-line architecture based on this new sensing principle and its operation are demonstrated. A divided/pausing bit-line sensing (DIPS) scheme, which is an application of this DSB principle to the conventional folded bit-line type of memory cell arrangement, is also proposed. The DIPS architecture achieves complete pausing states for alternate bit lines throughout the active period. These alternate pausing bit lines shield the inter-bit-line coupling noise between active bit lines. Here the inter-bit-line coupling noise is eliminated by a slight architectural change to the conventional folded bit-line memory cell array. These new memory core design alternatives provide high-density DRAM memory cores suitable for the 64-Mb level and beyond. with the memory array noise reduced significantly

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:26 ,  Issue: 4 )