By Topic

High temperature operation of lambda =1.5 mu m tensile strained multiple quantum well SIPBH lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Thijs, P.J.A. ; Philips Optoelectron. Centre, Eindhoven, Netherlands ; Binsma, J.J.M. ; Young, E.W.A. ; van Gils, W.M.E.

The high temperature operation of 1.5 mu m wavelength, strained-layer multiple quantum well, semi-insulating planar buried heterostructure lasers is reported. The lasers, which are grown by low-pressure organometallic vapour phase epitaxy and which have four 1.6% tensile strained In0.3Ga0.7As wells (thickness 8 nm), operate in CW mode up to heatsink temperatures of 140 degrees C. The CW output power at 100 degrees C is 26 mW per facet. These results are a marked improvement when compared to data reported thus far for 1.5 mu m wavelength lasers.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 10 )