Referenced Items are not available for this document.
The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg=0.2 μm and drain-source separation L ds=0.9 μm displayed unity current gain cutoff frequencies as high as fT=45 GHz (47 GHz) at Vds=+0.6 V (+1.5 V). Similar devices with Lg=0.2 μm and Lds=0.5 μm produced values of fT=61 GHz (62 GHz) at Vds=+0.6 V (+1.0 V). The value fT=62 GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET
Published in:
Electronics Letters
(Volume:35
,
Issue:
1
)
Date of Publication: 7 Jan 1999
- Page(s):
- 86 - 87
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 6143755
- Digital Object Identifier :
- 10.1049/el:19990075
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 7 Jan 1999
- Sponsored by :
- Institution of Engineering and Technology
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