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Record high characteristic temperature (To=122 K) of 1.55 μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier

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4 Author(s)
N. Ohnoki ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan ; G. Okazaki ; F. Koyama ; K. Iga

A record high characteristic temperature of 122 K (at 25-85°C) has been achieved in 1.55 μm strain-compensated AlGaInAs/AlGaInAs MQW lasers. A superlattice AlAs/AlInAs multiquantum barrier was used in the first successful realisation of long wavelength lasers. The threshold current density of the 50 μm-wide broad area 310 μm-long laser with cleaved facets is 1.1 kA/cm2 at 2°C. The slope efficiency decrease was only 9.5% from 25 to 85°C

Published in:

Electronics Letters  (Volume:35 ,  Issue: 1 )