Cart (Loading....) | Create Account
Close category search window

Photoluminescence from Er-implanted polycrystalline 3C SiC

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Uekusa, Shin‐ichiro ; Sch. of Sci. & Technol., Meiji Univ., Kanagawa, Japan ; Awahara, K. ; Kumagai, Masao

Erbium (Er) ions were implanted into polycrystalline 3C silicon carbide (SiC), and were characterized by photoluminescence (PL) measurements and Rutherford backscattering spectrometry (RBS) channeling analysis. The optimum annealing temperature and Er dose for SiC:Er were 1600°C and 3×1013 cm-2, respectively. PL intensity decreased at 1700°C, and the bandedge luminescence changed in relation to the luminescence of Er3+. The decrease in the PL intensity of Er3+ may be due to the sublimation of Si atoms and the decrease in excitation volume of PL. The PL intensity of SiC:Er,O (SiC:Er coimplanted with oxygen) was twice as strong as that of SiC:Er, whereas no other PL peaks were observed. Thermal quenching of the luminescence of Er3+ was suppressed by using SiC with a wide band gap as a host material and the Er3+-PL was observed at room temperature (RT). Our present results suggest that the transfer of the recombination energy of electron-hole pairs generated in SiC to the Er-4f-shell via the Auger effect causes the luminescence of Er3+ in SiC:Er

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 3 )

Date of Publication:

Mar 1999

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.