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Electron mobilities in MOS channels formed along anisotropically dry etched [110] silicon trench sidewalls

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1 Author(s)
Shenai, K. ; Gen. Electr. Corp. Res. & Dev. Center, Schenectady, NY, USA

Experimental silicon trench MOSFET structures were fabricated and used to estimate electron mobilities in MOS channels formed along [110] trench sidewalls. A channel electron mobility approaching 87% of its bulk value can be obtained. These results were derived from a novel trench fabrication process, measured MOSFET drain current-voltage characteristics and accurate two-dimensional device simulations of MOSFET transfer characteristics.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 9 )