Referenced Items are not available for this document.
Experimental silicon trench MOSFET structures were fabricated and used to estimate electron mobilities in MOS channels formed along [110] trench sidewalls. A channel electron mobility approaching 87% of its bulk value can be obtained. These results were derived from a novel trench fabrication process, measured MOSFET drain current-voltage characteristics and accurate two-dimensional device simulations of MOSFET transfer characteristics.
Published in:
Electronics Letters
(Volume:27
,
Issue:
9
)
Date of Publication: 25 April 1991
- Page(s):
- 715 - 717
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 3910817
- Digital Object Identifier :
- 10.1049/el:19910445
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 25 April 1991
- Sponsored by :
- Institution of Engineering and Technology
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