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Experimental silicon trench MOSFET structures were fabricated and used to estimate electron mobilities in MOS channels formed along  trench sidewalls. A channel electron mobility approaching 87% of its bulk value can be obtained. These results were derived from a novel trench fabrication process, measured MOSFET drain current-voltage characteristics and accurate two-dimensional device simulations of MOSFET transfer characteristics.
Date of Publication: 25 April 1991