By Topic

Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Park, G. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Huffaker, D.L. ; Zou, Z. ; Shchekin, O.B.
more authors

Data are presented on the temperature dependence of 1.3-μm wavelength quantum-dot (QD) lasers. A low-threshold current density of 90 A/cm2 is achieved at room temperature using high reflectivity coatings. Despite the low-threshold current density, lasing at the higher temperatures is limited by nonradiative recombination with a rapid increase in threshold current occurring above /spl sim/225 K. Our results suggest that very low threshold current density (/spl les/20 A/cm2) can be achieved at room temperature from 1.3-μm QD lasers, once nonradiative recombination is eliminated."

Published in:

Photonics Technology Letters, IEEE  (Volume:11 ,  Issue: 3 )