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Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers

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5 Author(s)
Park, G. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Huffaker, D.L. ; Zou, Z. ; Shchekin, O.B.
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Data are presented on the temperature dependence of 1.3-/spl mu/m wavelength quantum-dot (QD) lasers. A low-threshold current density of 90 A/cm/sup 2/ is achieved at room temperature using high reflectivity coatings. Despite the low-threshold current density, lasing at the higher temperatures is limited by nonradiative recombination with a rapid increase in threshold current occurring above /spl sim/225 K. Our results suggest that very low threshold current density (/spl les/20 A/cm/sup 2/) can be achieved at room temperature from 1.3-/spl mu/m QD lasers, once nonradiative recombination is eliminated.

Published in:

Photonics Technology Letters, IEEE  (Volume:11 ,  Issue: 3 )

Date of Publication:

March 1999

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