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A 2.7-V 900-MHz/1.9-GHz dual-band transceiver IC for digital wireless communication

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6 Author(s)
Tham, J.L. ; Conexant, Newport Beach, CA, USA ; Margarit, M.A. ; Pregardier, B. ; Hull, C.D.
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A 2.7-V 900-MHz/1.9-GHz dual-band transceiver IC consisting of receive, transmit, and local oscillator (LO) sections is presented. The transmit section achieves an unwanted sideband suppression of -43 dBc, LO leakage of -59 dBc, and third-order spurious rejection of -70 dBc. The transmit output noise level is -165 dBc/Hz at a 20-MHz offset from the carrier. The on-chip very high-frequency oscillator has a phase-noise level of -106 dBc/Hz at 100-kHz offset when operating at 800 MHz. The receive section has 36 dB of gain with 36 dB of gain range in 12-dB steps. The transceiver IC has been fabricated using a 25-GHz ft silicon bipolar process and is designed to operate over a supply-voltage range of 2.7-5.0 V

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:34 ,  Issue: 3 )