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Simulation of boron nitride sputtering process and its comparison with experimental data

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5 Author(s)
Meng Chen ; Dept. of Electr. Eng., Tsinghua Univ., Beijing, China ; Rohrbach, C. ; Neuffer, A. ; Barth, K.-L.
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In the paper, TRIM and TRIDYN simulation codes were used to simulate the sputtering processes of boron nitride (BN) films during bombardment of ions. The TRIM and TRIDYN codes are applicable to the simulation of sputtering processes of different target materials with amorphous and polycrystalline structure. The results of the simulations are compared with experimental data. The sputtering experiments of polycrystalline hexagonal BN (h-BN) and cubic BN (c-BN) films were performed in a Commonwealth Scientific Corporation (CSC) 38-cm ion beam source device. The comparison of calculated and experimental results indicated that a) the experimental sputtering yields of h-BN and c-BN films bombarded with Ar+ ions versus the angle of incidence are in reasonable agreement with the calculated results; b) the sputtering yields of h-BN and c-BN bombarded with Ar+ are nearly of the same values versus the angle of incidence-preferential sputtering of h-BN was not found; c) the calculated sputtering. Yields of BN as a function of Ar+ ion energy are very sensitive to values of the surface binding energy (SEE); and d) surface binding energy between 2 and 3 eV for BN appears to be reasonable for the simulation of sputtering process of h-BN and c-BN films

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Plasma Science, IEEE Transactions on  (Volume:26 ,  Issue: 6 )