Referenced Items are not available for this document.
Fully functional, 504-gate arrays have been fabricated on an MOCVD (metalorganic chemical-vapor deposition)-grown, 3-in-diameter, GaAs-on-silicon substrate. Each ECL (emitter-coupled-logic)-compatible gate array consists of an eight-bit adder, a D flip-flop, a 214 divider (with a divide-by-four tap), and a 263-stage inverter string. These circuits represent 90% gate utilization, or approximately 6600 transistors. The wafer-level yield of fully functional gate arrays is 10.7%. This demonstrates total functionality and yield for a digital circuit with LSI-level complexity using MOCVD-grown GaAs-on-silicon material and shows that this material, even with defect densities greater than 108 cm/sup -2/, is viable for high-density LSI circuits.<
Published in:
Electron Device Letters, IEEE
(Volume:9
,
Issue:
8
)
Date of Publication: Aug. 1988
- Page(s):
- 371 - 373
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 3252583
- Digital Object Identifier :
- 10.1109/55.747
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug. 1988
- Sponsored by :
- IEEE Electron Devices Society
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