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Measurement and modeling of Si integrated inductors

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5 Author(s)
Arcioni, P. ; Dipt. di Elettronica, Pavia Univ., Italy ; Castello, R. ; De Astis, G. ; Sacchi, E.
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This work describes a method to derive from measurements an accurate lumped element model of spiral integrated inductors on silicon substrate. The analysis method is based on a wideband two-port measurement of the s-parameters of the device under test and enables an accurate evaluation of the parasitic effects that limit the performances of these integrated devices

Published in:

Instrumentation and Measurement, IEEE Transactions on  (Volume:47 ,  Issue: 5 )

Date of Publication:

Oct 1998

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