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Optical measurement system for characterizing compound semiconductor interface and surface states

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5 Author(s)
Passlack, M. ; Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA ; Legge, R.N. ; Convey, D. ; Zhiyi Yu
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An optical measurement system that is useful for the characterization of interface and surface states on a wide variety of compound semiconductor material systems has been developed. The PC-based measurement system, using argon ion laser excitation from 10-1 to 104 W/cm2 power density and a light spot focused to a FWHM of 35 μm, acquires photoluminescence (PL) spectra from a semiconductor material system over a dynamic intensity range of more than eight orders of magnitude. The measured PL intensities that are evaluated using an extended, numerical self-consistent drift-diffusion model provide properties of interface and surface states such as density and capture cross section as well as derived quantities including nonradiative interface and surface recombination velocity

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Instrumentation and Measurement, IEEE Transactions on  (Volume:47 ,  Issue: 5 )