Si-based interband tunneling devices for high-speed logic and low power memory applications

This study extends the preliminary work of the authors, presenting improved epitaxially grown Si/Si/sub 0.5/Ge/sub 0.5//Si resonant interband tunnel diodes (RITDs) with current densities which exceed any previously reported for a Si-based NDR device. For the first time, the needs of Si-based TDTL circuits are beginning to be addressed, Two new classes of Si-based NDR devices are also reported here: Si-only RITDs and Si/Si/sub 0.5/Ge/sub 0.5/ heterojunction Esaki tunnel diodes with a digitally graded superlattice (DG-SL).