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Si-based interband tunneling devices for high-speed logic and low power memory applications

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8 Author(s)
S. L. Rommel ; Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE, USA ; T. E. Dillon ; P. R. Berger ; R. Lake
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This study extends the preliminary work of the authors, presenting improved epitaxially grown Si/Si/sub 0.5/Ge/sub 0.5//Si resonant interband tunnel diodes (RITDs) with current densities which exceed any previously reported for a Si-based NDR device. For the first time, the needs of Si-based TDTL circuits are beginning to be addressed, Two new classes of Si-based NDR devices are also reported here: Si-only RITDs and Si/Si/sub 0.5/Ge/sub 0.5/ heterojunction Esaki tunnel diodes with a digitally graded superlattice (DG-SL).

Published in:

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Date of Conference:

6-9 Dec. 1998