This paper reports on a comprehensive study of low-frequency (LF) noise in surface-channel dual-poly SOI CMOS-FETs. A new understanding of the pre-kink and post-kink excess noise mechanisms as well as the impact of this excess noise on RF ICs are presented.
Published in:
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Date of Conference: 6-9 Dec. 1998