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Device design methodology to optimize low-frequency noise in advanced SOI CMOS technology for RF ICs

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6 Author(s)
Ying-Che Tseng ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Huang, W.M. ; Mendiciono, M. ; Ngo, D.
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This paper reports on a comprehensive study of low-frequency (LF) noise in surface-channel dual-poly SOI CMOS-FETs. A new understanding of the pre-kink and post-kink excess noise mechanisms as well as the impact of this excess noise on RF ICs are presented.

Published in:
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Date of Conference: 6-9 Dec. 1998

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