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Monte Carlo simulation of hot-carrier degradation in scaled MOS transistors for VLSI technology

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3 Author(s)
Ghetti, A. ; Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA ; Bude, J. ; Liu, C.T.

This paper investigates the hot electron (HE) reliability of ultra thin gate oxide nMOSFETs by means of full band Monte Carlo (FBMC) simulation. First, a qualitative explanation of the smaller hot electron induced degradation (HEID) for thinner oxides is presented. Then, HEID in two different types of nMOSFET suitable for sub-0.1 /spl mu/m applications is analyzed as the devices are properly scaled below 0.1 /spl mu/m, addressing the question whether gate oxide thickness can be scaled down to 1 nm from the hot electron degradation point of view. Finally, the validity of usual extrapolation techniques of HEID lifetime from experimental data usually available in the range 2.5 V/spl les/V/sub DD//spl les/5 V to low voltages is addressed.

Published in:

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Date of Conference:

6-9 Dec. 1998

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