Cart (Loading....) | Create Account
Close category search window

Monte Carlo simulation of hot-carrier degradation in scaled MOS transistors for VLSI technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ghetti, A. ; Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA ; Bude, J. ; Liu, C.T.

This paper investigates the hot electron (HE) reliability of ultra thin gate oxide nMOSFETs by means of full band Monte Carlo (FBMC) simulation. First, a qualitative explanation of the smaller hot electron induced degradation (HEID) for thinner oxides is presented. Then, HEID in two different types of nMOSFET suitable for sub-0.1 /spl mu/m applications is analyzed as the devices are properly scaled below 0.1 /spl mu/m, addressing the question whether gate oxide thickness can be scaled down to 1 nm from the hot electron degradation point of view. Finally, the validity of usual extrapolation techniques of HEID lifetime from experimental data usually available in the range 2.5 V/spl les/V/sub DD//spl les/5 V to low voltages is addressed.

Published in:

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Date of Conference:

6-9 Dec. 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.