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The best combination of aluminum and copper interconnects for a high performance 0.18 /spl mu/m CMOS logic device

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13 Author(s)
Igarashi, M. ; ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan ; Harada, A. ; Amishiro, H. ; Kawashima, H.
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A high performance 0.18 /spl mu/m CMOS logic device has been developed with 0.15 /spl mu/m transistors and six-level interconnects. The multi-level interconnect system consists of a conventional process with Al wire and a dual damascene process with Cu wire. 4-level Al interconnects with fine metal pitch are suitable for short distance wiring such as intra block cell to cell interconnects, whereas 2-level Cu interconnects with coarse metal pitch are used for long distance wiring such as mega block to block interconnects to achieve high-speed and high-density LSI devices.

Published in:

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Date of Conference:

6-9 Dec. 1998