Referenced Items are not available for this document.
We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100/spl deg/C on plastic (PET) substrates. A XeCl excimer laser has been used both to crystallize sputtered a-Si and to heavily dope the TFT source/drain regions. Using a PECVD SiO/sub 2/ layer for the gate dielectric, and a post-fabrication anneal at 150/spl deg/C, we have succeeded in fabricating TFTs with I/sub ON//I/sub OFF/ ratios >5/spl times/10/sup 5/ and electron mobilities >60 cm/sup 2//V-s on polyester substrates.
Published in:
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Date of Conference: 6-9 Dec. 1998
- Page(s):
- 257 - 260
- Meeting Date :
- 06 Dec 1998-09 Dec 1998
- ISSN :
- 0163-1918
- Print ISBN:
- 0-7803-4774-9
- INSPEC Accession Number:
- 6176428
- Conference Location :
- San Francisco, CA, USA
- Digital Object Identifier :
- 10.1109/IEDM.1998.746349
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
