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We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100/spl deg/C on plastic (PET) substrates. A XeCl excimer laser has been used both to crystallize sputtered a-Si and to heavily dope the TFT source/drain regions. Using a PECVD SiO/sub 2/ layer for the gate dielectric, and a post-fabrication anneal at 150/spl deg/C, we have succeeded in fabricating TFTs with I/sub ON//I/sub OFF/ ratios >5/spl times/10/sup 5/ and electron mobilities >60 cm/sup 2//V-s on polyester substrates.
Date of Conference: 6-9 Dec. 1998