1.55 /spl mu/m absorption, high speed, high saturation power p-i-n photodetectors using low-temperature grown GaAs

By utilizing low-temperature grown GaAs (LT-GaAs) as the absorption material, subbandgap detection is possible due to mid gap defects and As precipitates. In this paper, the authors demonstrate the first 1.55 /spl mu/m photodetector in GaAs based material. Due to the short carrier trapping time, a bandwidth of over 20 GHz and a saturation power exceeding 10 mW are measured in this photodetector.