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1.55 /spl mu/m absorption, high speed, high saturation power p-i-n photodetectors using low-temperature grown GaAs

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4 Author(s)
Y. J. Chiu ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; S. Z. Zhang ; J. E. Bowers ; U. K. Mishra

By utilizing low-temperature grown GaAs (LT-GaAs) as the absorption material, subbandgap detection is possible due to mid gap defects and As precipitates. In this paper, the authors demonstrate the first 1.55 /spl mu/m photodetector in GaAs based material. Due to the short carrier trapping time, a bandwidth of over 20 GHz and a saturation power exceeding 10 mW are measured in this photodetector.

Published in:

Microwave Photonics, 1998. MWP '98. International Topical Meeting on

Date of Conference:

12-14 Oct. 1998