By Topic

Optimization of deep-etched, single-mode GaAs-AlGaAs optical waveguides using controlled leakage into the substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Heaton, J.M. ; Defence Evaluation & Res. Agency, Malvern, UK ; Bourke, M.M. ; Jones, S.B. ; Smith, B.H.
more authors

This paper presents a detailed experimental and theoretical study of the properties of deep-etched GaAs-AlGaAs optical waveguides designed using a version of the spectral index method which predicts mode losses due to leakage through the lower cladding into the high index GaAs substrate. By predicting and measuring the mode losses due to this mechanism as a function of guide width, we show that waveguides formed by reactive ion etching through the core to the lower cladding layer can be both low-loss (0.2 dB/cm) and single-mode even with core thicknesses and guide widths as large as 4.8 and 5.6 μm, respectively. We demonstrate the advantages of this type of guide for making compact integrated optic devices

Published in:

Lightwave Technology, Journal of  (Volume:17 ,  Issue: 2 )