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Very accurate high-frequency noise spectral analysis of P-channel FET's

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1 Author(s)
F. Svelto ; Facolta' di Ingegneria, Bergamo Univ., Dalmine, Italy

A bench-unit instrument to interface single FET devices to spectrum analyzers for noise investigation has been realized. It consists of an ultra low-noise amplifier which raises the noise of the device-under-test well above the intrinsic limits of the analyzers. It is estimated that the intrinsic contribution of the amplifier is 100 pV/√Hz in the frequency range 100 Hz to 10 MHz. Preliminary results lead to the possibility to analyze PMOSEET devices, belonging to a 0.8 μm CMOS technology, for which a noise model is proposed

Published in:

IEEE Transactions on Instrumentation and Measurement  (Volume:47 ,  Issue: 2 )