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Transformer coupled stacked FET power amplifiers

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3 Author(s)
J. G. McRory ; TRLabs, Calgary, Alta., Canada ; G. G. Rabjohn ; R. H. Johnston

The development of high-power linear ultrahigh-frequency amplifiers is made difficult by the low impedance of the devices used in the output stage, which causes matching difficulties and high radio-frequency current levels. A stacked field-effect transistor (FET) configuration is shown to reduce these problems with its increased output impedance and lower current required for a given output power. A linear analysis of the stacked FET configuration is given. Two class A monolithic microwave integrated circuit amplifiers are developed and subjected to one- and two-tone tests to demonstrate the performance of the stacked FET as a power amplifier at 900 MHz

Published in:

IEEE Journal of Solid-State Circuits  (Volume:34 ,  Issue: 2 )