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A 40-Gb/s preamplifier using AlGaAs/InGaAs HBTs with regrown base contacts

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6 Author(s)
Suzuki, Y. ; Optoelectron. & High Frequency Res. Labs., NEC Corp., Ibaraki, Japan ; Shimawaki, H. ; Amamiya, Y. ; Nagano, N.
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A preamplifier for 40-Gb/s optical transmission systems incorporating AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) with p+ regrown extrinsic base layers is described. The HBTs have a heavily doped regrown p+-GaAs layer in the extrinsic base regions and a thin graded InGaAs strained layer for the intrinsic base. Their measured peak fmax is above 200 GHz. The developed preamplifier provides a bandwidth of 38.4 GHz and a transimpedance gain of 41.1 dB Ω. Moreover, the frequency response as an optical receiver has a bandwidth of 32 GHz. These characteristics make the preamplifier suitable for use in a 40-Gb/s optical receiver. These results show that AlGaAs/InGaAs HBTs with p+ regrown extrinsic base layers are very promising for use in 40-Gb/s optical transmission systems

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Solid-State Circuits, IEEE Journal of  (Volume:34 ,  Issue: 2 )