By Topic

Cache RAM inductive fault analysis with fab defect modeling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Mak, T.M. ; Intel Corp., Santa Clara, CA, USA ; Bhattacharya, D. ; Prunty, C. ; Roeder, B.
more authors

This paper describes how an inductive fault analysis (IFA) method was used in determining the expected yield and test algorithm effectiveness in SRAMs. One portion of the paper describes the process of gathering and correlating defect data from different sources to get a meaningful and accurate defect distribution. This data is used in the IFA software to weight the probability of faults occurring. With the fault data from two SRAM cells the yield of those devices is estimated and compared with actual yield. The effectiveness of certain test patterns is also evaluated based on the probable faults for those circuits

Published in:

Test Conference, 1998. Proceedings., International

Date of Conference:

18-23 Oct 1998