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Low frequency noise and screening effects in AlGaN/GaN HEMTs

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7 Author(s)
Garrido, J.A. ; Dept. de Ingenieria Electron., ETSI Telecommun., Madrid, Spain ; Calle, F. ; Munoz, E. ; Izpura, I.
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Low frequency noise has been studied in Al0.15Ga0.85N/GaN high electron mobility transistors grown on sapphire substrates by metal organic vapour phase epitaxy. A strong dependence between the Hooge parameter αH and VGS, was found. A Hooge parameter as low as 5×10-4 was obtained at VGS=0 V. Mobility fluctuations produced by changes in the rate of trapping charge at dislocations are suggested to be the dominant 1/f noise mechanism, although screening effects by the channel electrons significantly reduce their effect on the 1/f noise properties

Published in:

Electronics Letters  (Volume:34 ,  Issue: 24 )