By Topic

RF- and noise characterisation of MOSFETs for mobile communications applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Breuer, V. ; Microwave Eng. Group, Tech. Univ. Berlin, Germany ; Klapproth, L. ; Tempel, M. ; Böck, G.
more authors

We present noise characterisations of silicon MOSFETs in terms of the four noise parameters from 150 MHz to 20 GHz. A special tuner system was designed and built to measure below 1 GHz. Additionally we present S-parameter measurements and show the good correspondence which can be achieved between measured and simulated S-parameters based on the extracted small signal elements

Published in:

Microwaves and Radar, 1998. MIKON '98., 12th International Conference on  (Volume:3 )

Date of Conference:

20-22 May 1998