RF- and noise characterisation of MOSFETs for mobile communications applications

We present noise characterisations of silicon MOSFETs in terms of the four noise parameters from 150 MHz to 20 GHz. A special tuner system was designed and built to measure below 1 GHz. Additionally we present S-parameter measurements and show the good correspondence which can be achieved between measured and simulated S-parameters based on the extracted small signal elements.