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RF- and noise characterisation of MOSFETs for mobile communications applications

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5 Author(s)
Breuer, V. ; Microwave Eng. Group, Tech. Univ. Berlin, Germany ; Klapproth, L. ; Tempel, M. ; Böck, G.
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We present noise characterisations of silicon MOSFETs in terms of the four noise parameters from 150 MHz to 20 GHz. A special tuner system was designed and built to measure below 1 GHz. Additionally we present S-parameter measurements and show the good correspondence which can be achieved between measured and simulated S-parameters based on the extracted small signal elements

Published in:

Microwaves and Radar, 1998. MIKON '98., 12th International Conference on  (Volume:3 )

Date of Conference:

20-22 May 1998

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