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A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence

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6 Author(s)
P. C. Sercel ; Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA ; H. A. Zarem ; J. A. Lebens ; L. E. Eng
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A novel technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum-well material, bulk GaAs, and Al/sub x/Ga/sub 1-x/As with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order-of-magnitude increase in lifetime.<>

Published in:

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Date of Conference:

3-6 Dec. 1989