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A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence

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6 Author(s)
Sercel, P.C. ; Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA ; Zarem, H.A. ; Lebens, J.A. ; Eng, L.E.
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A novel technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum-well material, bulk GaAs, and Al/sub x/Ga/sub 1-x/As with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order-of-magnitude increase in lifetime.<>

Published in:
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Date of Conference: 3-6 Dec. 1989

Page(s):
285 - 288
Meeting Date :
03 Dec 1989-06 Dec 1989
ISSN :
0163-1918
Print ISBN:
0-7803-0817-4
INSPEC Accession Number:
3787445
Conference Location :
Washington, DC, USA
Digital Object Identifier :
10.1109/IEDM.1989.74280
Product Type:
Conference Publications

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